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Nano Optoelectronics Group,Key Laboratory of Electronic Materials and Devices of Tianjin

Translator: International Office Editor: release date :2015-12-08

Professor Wengang Bi ---Nano Optoelectronics Group

School of Electronics and Information Engineering,
Key Laboratory of Electronic Materials and Devices of Tianjin,
Hebei University of Technology

Email: wbi@hebut.edu.cn, Tel: +862260435772

Research Areas

·           Low-dimensional photonic and electronic materials (Perovskite, Graphene, colloidal quantum dots, new polymer composite, soft magnets): new structures, novel synthesis methods, display and solid-state lighting applications.

·           Micro/nano-fabrications and nano devices: nanomaterial printing technology, nanoimprint technology, and spherical-lens photolithography.

·           Wide-band-gap semiconductor optoelectronic materials and devices (quantum-dot LEDs, Solar Cells, LDs) as well as electronic devices (HEMT, MOSFET, IGBT, thyristor etc.): MOCVD growth, device design, modeling, fabrication, and characterization.

·           Piezoelectronics.

·           Integration of opto and electronic devices


Positions Available


We have immediate openings for postdoctoral researchers and are actively looking for enthusiastic students who plan to pursue advanced studies at Ph.D or Master degree level in the above-mentioned research areas. Candidates with Materials Science, Physics, Electrical Engineering and Chemistry etc. background are welcome to apply! Please send resume to wbi@hebut.edu.cn.


Group Members


Professor Wengang Bi


More than 25 years of persistent research and development on cutting-edge nanomaterials, photonic materials and device structures with their applications to optoelectronic devices, lighting and displays; Principle Investigator and successfully led a number of large-scale R&D programs that resulted in commercial new products. One of the key technical leaders and top managements who successfully commercialized quantum-dots technology for lighting and displays and led Najing Technology Co., Ltd went public (IPO)

·           25+ years invaluable research, product development and commercialization experience on nanomaterials, photonic materials, device physics, device design, and characterization (Colloidal-quantum dots-based displays; Lasers – Nanoscale Microdisk, DFB, FP, VCSELs, LEDs, EA modulators; APDs, and detectors) at world-class laboratories and industries (Hewlett-Packard Laboratory, Agilent Technologies Laboratory, Philips Lumileds) combined with successful track record of leadership in R&D and technology development that led to the initial public offering (IPO) of start ups.

·           Pioneered a number of research and technology developments with successful commercialization:

o    Developed quantum dots (QD) based display technology with dramatically improved color gamut (from 70% to 120% NTSC standard) and commercialized QD TV in partner with TV manufacturers;

o    Groundbreaking novel technology incorporating state-of-the-art quantum dots for solid-state lighting applications with much improved efficacy at high CRI (>15% efficacy improvement at >90 CRI which leads to a 15% additional energy savings for achieving the same light output);

o    Nanoscale Microdisk Lasers with Dilute III-V Nitride Semiconductors having superior high-temperature performance: First to use InNAsP/InGaAsP high carrier confinement in double heterostructures for microdisk lasers (T0 improved from 60K to 97K);

o    High-speed integrated EA modulator/DFB laser arrays with selective-area growth technology delivering multiple times faster speed than single-channel laser

o    Mid-infrared laser and detector with the then novel III-V Sb-containing compounds and superlattices;

o    Pioneer in long wavelength, 1300-1550 nm, vertical-cavity surface-emitting lasers (VCSELs) research and developments.

o    Novel semiconductor material epitaxy growth technique – gas source molecular beam epitaxy




Ph.D.   (Applied Physics): Sept. 1992 - Feb. 1997    Dept. of Electrical and Computer Engineering, University of California, San Diego

M.E.     (Semiconductor Materials): Sep. 1988 - Sept. 1991            

              Shanghai Institute of Metallurgy, the Chinese Academy of Sciences, China

B.S.     (Semiconductor Physics and Devices): Sep. 1984 - July 1988            

              Dept. of Electronic Science, Jilin University, China


AWARDS and Professional Activities


·           Distinguished Chair Professor, Hebei University of Technology, china (2014)

·           Awardee of China National “1000 Talents Plan” (2011)

·           Awardee of China Zhejiang Province “1000 Talents Plan” (2010)

·            “Chinese Academy of Sciences Natural Science Award” (1998)

·           Research Scholarship from NSF, UC San Diego, CA (1992~1996)

·           The President Fellowship Award of Chinese Academy of Sciences (1991)

·           Excellent Dissertation Award, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, China (1991)

·           IEEE senior member; OSA, APS, SPIE, and MRS member

·           IEEE Electron Devices Society member, IEEE Communications Society member

·           Member of OLN (Optics Legislative Network) and OSA Member Advisory Network

·           Reviewer of Optics Letters, Optics Express, Applied Optics, Optical Materials Express, Journal of the Optical Society of America A, Applied Physics A

·           China “1000 Talents Plan” magazine editor

·           Committee member of the China National “1000 Young Talents Plan” review panel

·           Committee member of China Jiangsu Province “Shuangchuang Talents Plan” review panel

·           Committee member of China Jinhua City “Shuanglong Talents Plan” review panel

·           China Zhejiang province global foreign expert

·           Member of Board of Directors – NNCrystal US Corporation, Najing Technology Corporation Limited, Hangzhou Nanocrystal Lighting Technology Co., Ltd

·           Interviewed and reported by <Scientific Chinese >magazine, people’s daily overseas edition newspaper, Zhejiang TV

·           Authored or co-authored 61 refereed publications and presented 20 conference talks

·           Inventor of 20 patents

·           Lead editor of a new book, Handbook of GaN Semiconductor Materials and Devices, to be published by Taylor and Francis Group


Professor Shu Xu


Dr. Shu Xu received his B. S. (2001) and M. S. (2004) from Nanjing University, P. R. China. Between 2005 and 2009 he carried out Ph.D study at Freiburg University, Germany and University of East Anglia, UK, focusing on group III-V colloidal nanocrystals. After graduation and working as a postdoc at INSA-Toulouse, France, he joined Philips B.V. in 2010 and worked at Philips Research Netherland and China as senior research scientist. Research activities span from advanced photonic and electronic materials development to their applications, including quantum dot nanocomposite, printed electronics, light-emitting diode (LED) packaging technology and process, optoelectronics architecture and devices, etc. In 2015, he joined Hebei University of Technology as professor, working at the School of Electronics and Information Engineering and Key Laboratory of Electronic Materials and Devices of Tianjin to explore new advances in photonic materials and devices.

Dr. Xu is proactively driving interdisciplinary research and innovation by exploiting scientific and technological advances to constantly challenge and break boundaries, active in both fundamental research and industrial R&D. He has published 27 SCI articles in top scientific journals such as Advanced Materials, Journal of the American Chemical Society, Angew. Chem-Int. Edit, etc., and 16 international IP filling covering from fundamental photonic material structure and device architecture to LED integrated packaging and lighting application. Many of his R&D work has been transferred into products such as SigmaAldrich InP/ZnS quantum dots and Philips LED and display lighting module.


Research Direction

Nano-Photonic Materials and Devices

Fundamental research activities

    - Phosphor and Quantum Dots: New structure, synthesis approach, lighting application

    - Electronic Materials: New polymer composite, soft magnets, printed electronics

    - Wafer level packaging: Thin film process and technology, new multi-thin film EL architecture

Industrial R&D activities

    - Quantum dots LED display

    - Photonic devices, printed electronic devices

    - AC-LED & HV-LED

    - Wireless power charge

- Eye and skin care, lighting perception


Working Experience

2015.7- Professor, Hebei University of Technology, School of Electronics and Information Engineering

2010.4-2015.6, Senior Research Scientist, Philips Research

2009.9-2010.3, Postdoc, INSA-Toulouse



2005.1-2009.4, Ph.D, FMF-Freiburg University/Chemical School-University of East Anglia

2001.8-2009.6, M.S., School of Chemistry-Nanjing University

1007.8-2001.6, B.S., School of Chemistry-Nanjing University


Major Awards

2015 High-level Overseas Talents Return Home Program (China Ministry of Human Resource and Social Security. Only 20 people nation-wide being awarded in 2015)

2012 Philips annual outstanding achievement (Philips, team work)

2010 Marie Curie Young Talents Fellowship (The European Commission)

2008 Provincial Advanced Science and Technology Second Prize (Jiangsu Province State Department of Science and Technology)


Professor Zihui Zhang


Dr. Zihui Zhang received his Bachelor of Science and Doctor of Philosophy from Shandong University in 2006 and Nanyang Technological University in 2015, respectively. He was also a nitride-based-green-LED/laser diode research assistant at Rensselaer Polytechnic Institute from 2006 to 2009.

Dr Zhang’s research interests include the epitaxial growth of III-V nitride light emitting diodes (LEDs), laser diodes (LDs) and electronic devices such as HEMT. He has the experience of epitaxial growth for eight years and he is excellent in managing the material defects and material characterizations. Dr. Zhang’s expertise also covers the device fabrication, device characterization and device modeling for quantum-dot light emitting diodes, Perovskite-structured optoelectronic device and wide-band-gap based electronic devices. Dr. Zhang has authored/co-authored more than 25 high-tier journal publications and received more than 300 citations. He has also filed 5 US, Turkey, Singapore, China patents. He has also delivered several technical talks invited by conferences and institutions word widely. Dr. Zhang has made significant contributions to the solid-state lighting community in solving efficiency droop for LED devices. Dr. Zhang is the first scholar of proposing and demonstrating several new physical concepts regarding the III-V nitride LED devices, such as the polarization cooling effect, polarization self-screening effect, hole accelerator, hole modulator, charge inverter etc. His research work such as the design on suppressing Auger recombination, hole accelerator and hole modulator have been highlighted and reported by Semiconductor-Today. Dr. Zhang has also made the word’s first blue LED driven by three-dimensional hole gas and this work was highlighted by the Editor of Applied Physics Letters. Besides, he is also the winner of the prestigious Chinese Government Award for Outstanding Self-Financed Students Abroad in 2014 issued by China Scholarship Council.


Educational Background

·         Doctor of Philosophy from School of Electrical and Electronic Engineering of Nanyang Technological University (Singapore) in 2015.

·         Bachelor of Science from School of Physics of Shandong University (P. R. China) in 2006.

Professional Experiences

·         Professor, Hebei University of Technology (2015/07-present, Tianjin, P. R. China)

·         Research Fellow, Nanyang Technological University (2015/02-2015/07, Singapore).

·         Project officer, Nanyang Technological University (2014/02/-2015/01, Singapore).

·         Full-time Ph.D. candidate and researcher, Nanyang Technological University (2010/01-2014/01, Singapore).

·         Teaching assistant, Nanyang Technological University (2011/12-2013/05, Singapore)

·         Research assistant, Rensselaer Polytechnic Institute (2008/06-2009/07, USA).

·         Teaching assistant, Rensselaer Polytechnic Institute (2006-2008, USA).

Research Interest

·         MOCVD growth and technology development for InGaN/GaN optoelectronic devices and electronic devices.

·         Characterization and defect control of III-nitride semiconductor material.

·         Device design, modeling and fabrication of high power InGaN/GaN optoelectronic devices and electronic devices.

·         Quantum-dot light-emitting diodes: device simulation, device design and characterization.

·         Perovskite based solar cells and light-emitting diodes: device simulation, device design and characterization.

·         Wide-band-gap semiconductor electronic devices: HEMT, MOSFET, IGBT, thyristor etc.

·         Development of the Nano-imprint technology.

·         Piezoelectronics.

·         Graphene based optoelectronic devices and transistors.


Assistant Professor Chong Geng


Dr. Chong Geng received her B. S. degree in College of Chemistry from Beijing Normal University in 2010, and her Ph.D. in inorganic chemistry from Tsinghua University in 2015. She joined the School of Electronics & Information Engineering, Hebei University of Technology as an assistant professor in September 2015.

Dr. Geng’s research interest focuses on the fabrication and application of nanostructures in optoelectronic devices, including spherical-lens photolithography and micro/nanofabrication based on colloidal spheres.

Dr. Geng has 6 SCI articles published as first author in top journals such as Journal of Materials Chemistry, Small, ACS Photonics, etc., and 11 SCI articles published as co-author and 1 granted patent. While pursuing Ph.D. study in Tsinghua University, she received the National Scholarship for Graduate Students, the Comprehensive Scholarship of Tsinghua University, and the Guanghua Scholarship for outstanding Ph.D. student.


Assistant Professor Yonghui Zhang


Dr. Yonghui Zhang’s main research area is GaN-based light emitting diode (LED) with micro- or nano-structure. He pioneered a number of nanotechnologies including nano-patterned sapphire substrate, photonic crystal and core-shell technology to improve the quantum efficiency of LED. Dr. Zhang authored or co-authored more than 10 papers in international and Chinese mainstream journals including 4 SCI indexed and 6 first author papers. Dr. Zhang also filed 2 patents in these fields.

His Bachelor’s and Master’s degree were obtained from Hebei University of Technology in 2007 and Beijing University of Technology, respectively. After receiving his doctorate degree from the Institution of Semiconductors, Chinese Academy of Sciences in 2015, Dr. Zhang started engaging in teaching and research work in Hebei University of Technology.