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Zhang zihui

Translator: International Office Editor: release date :2016-01-14

Dr. Zhang Zihui received his BS degree from Shandong University and PhD from Nanyang Technological University (NTU) in 2006 and 2015, respectively. He worked as a Project Officer at NTU from February of 2014 to January of 2015 and was promoted to Research Fellow in February of 2015. He joined Hebei University of Technology in July of 2015 as a full Professor at Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering.

Dr Zhang’s research interests include epitaxial growth of III-V nitride light emitting diodes (LEDs), laser diodes (LDs) and electronic devices such as HEMT. He has the experience of epitaxial growth for eight years and he is excellent in managing material defects and material characterizations. Dr. Zhang’s expertise also covers device fabrication, device characterization and device modeling for III-V nitride optoelectronic and electronic devices. Currently, Dr. Zhang is working on the technology development for the high-power LEDs. He has authored/co-authored almost 30 high-tier journal publications in Applied Physics Letters, Optics Letters, Optics Express, IEEE, etc., and he has given invited talks at different universities and institutes. Dr. Zhang has also filed 5 US patents. Dr. Zhang is the first scholar of proposing and demonstrating several new physical concepts regarding the III-V nitride LED devices, such as the polarization cooling effect, polarization self-screening effect, hole accelerator, hole modulator, charge inverter etc. His research have been highlighted and reported by Semiconductor-Today, such as the design on suppressing Auger recombination, hole accelerator and hole modulator. Dr. Zhang has also made the word-first blue LED driven by three dimensional hole gas, which was highlighted by the Editor of Applied Physics Letters. Besides, he is also the winner of the prestigious Chinese Government Award for Outstanding Self-Financed Students Abroad in 2014 issued by the China Scholarship Council. Dr. Zhang’s research is currently funded by Natural Science Foundation of China (Project No. 51502074).

 

Dr. Prof. Zhang Zihui

Tel+86-15900384982                             Email:zh.zhang@hebut.edu.cn/zhangzihuintu@hotmail.com

Educational Background

·         Doctor of Philosophy from School of Electrical and Electronic Engineering of Nanyang Technological University (Singapore) in 2015.

·         Bachelor of Science from School of Physics of Shandong University (P. R. China) in 2006.

Professional Experiences

·         Professor, Hebei University of Technology (2015/07-present, Tianjin, P. R. China)

·         Research Fellow, Nanyang Technological University (2015/02-2015/07, Singapore).

*       The epitaxial growth of the high-power III-V nitride LEDs by MOCVD technology

*       Epitaxial LED growth on sapphire substrates and Si substrates by MOCVD technology.

*       Device fabrication, material and device characterization, material defect control, and device modeling.

·         Project officer, Nanyang Technological University (2014/02/-2015/01, Singapore).

*       The epitaxial growth of the high-power blue III-V nitride light-emitting diodes (LEDs) by MOCVD technology

*       Device fabrication, material and device characterization, material defect control and device modeling.

·         Full-time Ph. D candidate and researcher, Nanyang Technological University (2010/01-2014/01, Singapore).

*       The epitaxial growth of the high-power III-V nitride LEDs by MOCVD technology,

*       Device fabrication, material and device characterization, material defect control and device modeling.

*       Thesis title: Design and Growth of High-Power Gallium Nitride Light-Emitting Diodes

·         Teaching assistant, Nanyang Technological University (2011/12-2013/05, Singapore)

Courses: C+ language programming, LABVIEW programming, College Physics.

·         Research assistant, Rensselaer Polytechnic Institute (2008/06-2009/07, USA).

*       The epitaxial growth of the III-V nitride green LEDs and laser diodes (LDs) by MOCVD technology

*       Device fabrication, material and device characterization, material defect control and device modeling.

·         Teaching assistant, Rensselaer Polytechnic Institute (2006-2008, USA).

Courses: College Physics, Quantum Physics, Atomic Physics.

 

Research Interest

·         MOCVD growth and technology development for InGaN/GaN optoelectronic devices and electronic device.

·         Characterization and defect control to III-nitride semiconductor material.

·         Device design, modeling and fabrication to high power InGaN/GaN optoelectronic devices and electronic devices.

·         Quantum-dot light-emitting diodes: device simulation, device design and characterization.

·         Perovskite based solar cells and light-emitting diodes: device simulation, device design and characterization.

·         Wide-band-gap semiconductor electronic devices: HEMT, MOSFET, IGBT, thyristor etc.

·         Development of the Nano-imprint technology.

·         Piezoelectronics.

·         Graphene based optoelectronic devices and transistors.

 

Technical Refereed Journal Publications

1. Z. -H. Zhang, S. T. Tan, Z. Ju, W. Liu, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, "On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes," IEEE/OSA J. Disp. Technol. 9(4), 226-233 (2013), IF=2.28.Top 4 of the 25 and top 22 of 25most downloaded papers of May and June of  2013 in IEEE/OSA Journal Display Technology, respectively.

2. Z. -H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir, "Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer," Opt. Express 21(4),4958-4969 (2013), IF=3.587.

3. Z. -H. Zhang, S. T. Tan, Y. Ji, W. Liu, Z. G. Ju, Z. Kyaw, X. W. Sun and H. V. Demir, “A PN-type quantum barrier for InGaN/GaN light emitting diodes”, Opt. Express 21(13), 15676–15685 (2013), IF=3.587.

4. Z. -H. Zhang, S. T. Tan, Z. Kyaw, Y. Ji, W. Liu, Z. G. Ju, N. Hasanov, X. W. Sun and H. V. Demir, “InGaN/GaN light-emitting diode with a polarization tunnel junction”, Appl. Phys. Lett. 102(19), 193508-5(2013), IF=3.844.

5. Z. -H. Zhang, S. T. Tan, Z. Kyaw, Y. Ji, W. Liu, Z. G. Ju, X. Zhang, X. W. Sun, and H. V. Demir, “p-doping-free InGaN/GaN light emitting diodes driven by three-dimensional hole gas”, Appl. Phys. Lett.103(26), 263501-5 (2013), IF=3.844, (Editorial selected paper among Editor’s picks in March of 2014).

6. Z. -H. Zhang, W. Liu, S. T. Tan, Z. G. Ju, Y. Ji, Z. Kyaw, X. Zhang, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, X. W. Sun, and H. V. Demir, “On the mechanisms of InGaN electron cooler in InGaN/GaN light emitting diodes”, Opt. Express 22 (S3), A779-A789 (2014), IF=3.587.

7. Z. -H. Zhang, Y. Ji, Z. Kyaw, S. T. Tan, Z. G. Ju, W. Liu, X. Zhang, N. Hasanov, S. Lu, Y. Zhang, B. Zhu, X. W. Sun and H. V. Demir, “On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer”, Appl. Phys. Lett. 104(07), 073511-5 (2014), IF=3.844.

8. Z. -H. Zhang, Z. G. Ju, S. T. Tan, Z. Kyaw, W. Liu, Y. Ji, X. L. Zhang, N. Hasanov, X. W. Sun and H. V. Demir, “Improving hole injection efficiency by manipulating its transport mechanism through the p-type electron blocking layer”, Opt. Lett. 39(8), 2483-2486 (2014), IF=3.399.

9. Z. Kyaw*, Z. -H. Zhang*, S. T. Tan, Z. G. Ju, X. L. Zhang, W. Liu, Y. Ji, N. Hasanov, X. W. Sun and H. V. Demir, “On the effect of n-GaN/p-GaN/n-GaN/p-GaN/n-GaN built-in junction in the n-GaN layer for InGaN/GaN light emitting diodes”, Opt. Express 22(1), 809-816 (2014), IF=3.587, (*authors of equal contribution).

10. Z. -H. Zhang, W. Liu, Z. G. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. L. Zhang, L. Wang, X. W. Sun and H. V. Demir, “Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers”, Appl. Phys. Lett. 104(24), 243501 (2014), IF=3.844.

11. Z. -H. Zhang, W. Liu, Z. G. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. L. Zhang, L. Wang, X. W. Sun and H. V. Demir, “Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency”, Appl. Phys. Lett. 104(25), 251108 (2014), IF=3.844.

12. Z. -H. Zhang, W. Liu, Z. G. Ju, S. T. Tan, Y. Ji, Z. Kyaw, X. L. Zhang, L. Wang, X. W. Sun and H. V. Demir, “InGaN/GaN multiple-quantum-well light-emitting diodes with a gradient InN composition suppressing the Auger recombination”, Appl. Phys. Lett. 105(3), 033506(2014), IF=3.844, (Highlighted by semiconductor-today in August of 2014).

13. Z. -H. Zhang, W. Liu, S. T. Tan, Y. Ji, L. Wang, B. Zhu, Y. Zhang, S. Lu, X. Zhang, N. Hasanov, X. W. Sun and H. V. Demir, “A hole accelerator for InGaN/GaN light-emitting diodes”, Appl. Phys. Lett.  105, 153503 (2014), (Highlighted by semiconductor-today in November of 2014).

14. Z. -H. Zhang, Z. Kyaw, W. Liu, Y. Ji, L. Wang, S. T. Tan, X. W. Sun and H. V. Demir, “A hole modulator for InGaN/GaN light-emitting diodes”, Appl. Phys. Lett. 106(06), 063501 (2015), IF=3.844, (Highlighted by semiconductor-today in March of 2015).

15. Z. G. Ju*, Z. –H. Zhang*, W. Liu, B. Zhu, S. Lu, Y. Zhang, S. T. Tan, Z. Kyaw, X. Zhang, N. Hasanov, X. W. Sun and H. V. Demir, “Remotely doped p-type layer for improved hole injection of InGaN/GaN light-emitting diodes”, submitted to Appl. Phys. Lett., (under review, *authors of equal contribution).

16. Y. Ji, Z. -H. Zhang, S. T. Tan, Z. G. Ju, Z. Kyaw, N. Hasanov, W. Liu, X. W. Sun, and H. V. Demir, "Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier," Opt. Lett. 38(2), 202-204 (2013), IF=3.399.

17. Y. Ji, Z. -H. Zhang, Z. Kyaw, S. T. Tan, Z. G. Ju, X. L. Zhang, W. Liu, X. W. Sun, and H. V. Demir, “Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes”, Appl. Phys. Lett. 103(5), 053512-5 (2013), IF=3.844.

18. Z. G. Ju, S. T. Tan, Z. -H. Zhang, Y. Ji, Z. Kyaw, Y. Dikme, X. W. Sun, and H. V. Demir, "On the origin of the red shift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer," Appl. Phys. Lett. 100(12), 123503-4 (2012), IF=3.844.

19. Z. G. Ju, W. Liu, Z. -H. Zhang, S. T. Tan, Y. Ji, Z. Kyaw, X. Zhang, S. Lu, Y. Zhang, B. Zhu, N. Hasanov, X. W. Sun and H.V. Demir, “Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers”, Appl. Phys. Lett. 102(24), 243504-3(2013), IF=3.844.

20. Y. Ji, W. Liu, T. Erdem, R. Chen, S.T. Tan, Z. -H. Zhang, Z. G. Ju, X. Zhang, H. Sun, X. W. Sun, S.P. DenBaars and H.V. Demir, “Comparative study on carrier dynamic of InGaN/GaN light emitting diodes grown on (0001) polar plane and (11-22) semipolar plane”, Appl. Phys. Lett. 104(14), 143506 (2014), IF=3.844.

21. Z. Kyaw, J. Wang, K. Dev, S. T. Tan, Z.G. Ju, Z. -H. Zhang, Y. Ji, N. Hasanov, W. Liu, X. W. Sun, and H. V. Demir, “Room-temperature larger-scale highly ordered nanorod imprints of ZnO film”, Opt. Express 21(22), 26846-26853 (2013), IF=3.587.

22. Z. Kyaw, Z. -H. Zhang, W. Liu, S. T. Tan, Z. G. Ju, X. L. Zhang, Y. Ji, N. Hasanov, B. Zhu, S. Lu, Y. Zhang, J. H. Teng, X. W. Sun and H. V. Demir, “Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes”, Appl. Phys. Lett. 104(16), 161113 (2014), IF=3.844.

23. Z. G. Ju, W. Liu, Z. -H. Zhang, S. T. Tan, Y. Ji, Z. Kyaw, X. L. Zhang, S. P. Lu, Y. P. Zhang, B.B. Zhu, N. Hasanov, X. W. Sun and H. V. Demir, “Advantages of the blue InGaN/GaN light-emitting diodes with a AlGaN/GaN/AlGaN quantum well structured electron blocking layer”, ACS Photon. 1 (4), 377–381 (2014).

24. Y. P. Zhang, Z. -H. Zhang, W. Liu, S. T. Tan, Z. G. Ju, X. L. Zhang, Y. Ji, L. C. Wang, Z. Kyaw, N. Hasanov, B. B. Zhu, S. P. Lu, X. W. Sun and H. V. Demir, “Nonradiative recombination - critical in choosing quantum well number for InGaN/GaN light-emitting diodes”, Opt. Express 23(3), A31(2014), IF=3.587.

25. S. P. Lu, W. Liu, Z. -H. Zhang, S. T. Tan, Z. G. Ju, Y. Ji, X. L. Zhang, Y. P. Zhang, B. B. Zhu, Z. Kyaw, N. Hasanov, X. W. Sun and H. V. Demir, “Low-thermal-mass LEDs: size effect and limits”, Opt. Express 22(26), 32200(2014), IF=3.587.

26. L. C. Wang, Y. Zhang, W. Liu, Z. –H. Zhang, S. T. Tan, X. Y. Yi. G. H. Wang, X. W. Sun, H. W. Zhu and H. V. Demir, “Graphen-based transparent conductive electrodes for GaN-based light-emitting diodes: challenges and countermeasures”, Nano Energy 12, 419-436(2015), IF=10.211.

27. L. C. Wang, Z. –H. Zhang and N. Wang, “Current crowding phenomenon: theoretical and direct correlation with the efficiency droop of light emitting diodes by a modified ABC model”, J. Quantum Electron. 51(5), 3200109 (2015), IF=2.113.

28. B. Zhu, W. Liu, Z. –H. Zhang, S. T. Tan, X. W. Sun and H. V. Demir, Tandem InGaN/GaN light-emitting diodes, Photonics Conference , 30-31,  DOI: 10.1109/IPCon.2015.7323507 (2015).

More than four journal papers are under preparation/review.

Patents and Disclosures

1. ZHANG Zi-Hui, TAN Swee Tiam, SUN Xiaowei, Hilmi Volkan DEMIR, “A light-emitting device”, US provisional patent application No. 61/662,174, PCT/SG2013/000224, Singapore application No. 11201408080U (granted), Turkey Application No. 2014/15497, China Application No. : 201380033058.X, Taiwan Application No:  102120981.

2. LIU WeiZHANG Zi-Hui, JU Zhen GangZHANG Xueliang, TAN Swee Tiam, SUN Xiaowei and Hilmi Volkan DEMIR, “Method of Fabricating Semiconductor Devices”, US provisional patent application No. 61/847,295, PCT application No. PCT/SG2013/000542, Singapore Application No. : 11201503368T.

3. ZHANG Xueliang, ZHANG Zi-Hui, JI Yun, JU Zhengang, ?LIU Wei, TAN Swee Tiam, SUN Xiaowei, and Hilmi Volkan DEMIR, “Designs and Methods For Fabricating A Diode With Double-Sided Current Guiding Structures”, US provisional patent application No. 61/910,609, PCT Application No.  PCT/SG2014/000541.

4.LIU Wei, Zabu KYAW, ZHANG Zi-Hui, ZHU Binbin, JU Zhengang, TAN Swee Tiam, ZHANG Xueliang, Hilmi Volkan DEMIR, “Polarity-Engineered High-Efficiency LEDs”, US Provisional application No. 61/996,661, Taiwan Application No:  104115189.

5.JU Zhengang, LIU Wei, ZHANG Xueliang, TAN Swee Tiam, JI Yun, ZHANG Zi-Hui, Hilmi Volkan DEMIR, “Network Island Metal Support For Inverted LEDs”, US Provisional application61/996,662, PCT Application No:  PCT/SG2015/050100, Taiwan Application No:  104114843.

Refereed Conference Publications and Technical Talks

1. Z. G. Ju, S. T. Tan, Z. -H. Zhang, Y. Ji, Z. B. Kyaw, Y. Dikme, X. W. Sun and H. V. Demir, “The study on the uGaN interlayer to the performance of InGaN/GaN blue light emitting diodes ”, Ninth International Symposium (ISSLED 2012), Germany, 2012.

2. Y. Ji, S. T. Tan, Z. G. Ju, Z. -H. Zhang, Z. Kyaw, N. Hasanov, W. Liu, X. W. Sun, and H. V. Demir, “Dual-Wavelength Study on Hole Transport Behaviour with P-Type Doped Quantum Barriers in InGaN-GaN Light-Emitting Diodes”, The 5th IEEE International Nanoelectronics Conference (INEC), Singapore, 2013.

3. Z. -H. Zhang, S. T. Tan, W. Liu, Z. G. Ju, Z. Kyaw, Y. Ji,  X. W. Sun and H.V. Demir, “Enhanced optical power for InGaN/GaN light emitting diodes through the step-doped quantum barriers’’, 7th international Conference on Materials for Advanced Technologies, Singapore, 2013.

4. Z. Kyaw, S. T. Tan, W. Liu, Z. G. Ju, Z. -H. Zhang, Y. Ji, X. W. Sun and H. V. Demir, “Influence of the Interval Growth Temperature Between the Nucleation Layer Growth and the High Crystalline GaN Growth on Quality of GaN Films Grown by MOCVD”, 7th international Conference on Materials for Advanced Technologies, Singapore, 2013.

5. Z. G. Ju, S. T. Tan, Z. -H. Zhang, Y. Ji,  Z. Kyaw, X. W. Sun and H. V. Demir, “Growth Optimization of the Low Temperature u-GaN Interlayer for High Power InGaN/GaN Blue Light Emitting Diodes”, 7th international Conference on Materials for Advanced Technologies, Singapore, 2013.

6. W. Liu, Z. -H. Zhang, Z. G. Ju, X. Zhang, S. T. Tan, X. W. Sun and H. V. Demir, “Improvement of Optical Performance of GaN/InGaN High Power LEDs by Internal Electrical Field Engineering”, 7th international Conference on Materials for Advanced Technologies, Singapore, 2013.

7. Z. –H. Zhang, X. W. Sun and H. V. Demir, “Design and growth of high power GaN-based light-emitting diodes”, Hefei University of Technology, Hefei, P. R. China, 2014, invited talk.

8. Z. –H. Zhang, X. W. Sun and H. V. Demir, “Design and growth of high power GaN-based light-emitting diodes”, South University of Science and Technology of China, Shenzhen, P. R. China, 2014, invited talk.

9. Z. –H. Zhang, X. W. Sun and H. V. Demir, “Design and growth of high power GaN-based light-emitting diodes”, South China University of Technology, Guangzhou, P. R. China, 2014, invited talk.

10. Z. –H. Zhang, W. G. Bi, Y. H. Zhang, X. W. Sun and H. V. Demir, “A hole accelerator for energizing holes and facilitating the injection for InGaN/GaN light-emitting diodes”, The 2015 Energy Materials and Nanotechnology (EMS) Guangzhou Meeting, Guangzhou, 2015, invited talk.

11. Z. –H. Zhang, W. G. Bi, Y. H. Zhang, X. W. Sun and H. V. Demir, “Self-screening effect to the polarization induced electric field in the [0001] oriented InGaN/GaN light-emitting diodes”, 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, P. R. China, 2015.

12. Z. –H. Zhang, W. G. Bi, Y. H. Zhang, X. W. Sun and H. V. Demir, “A hole modulator to increase the hole concentration in the p-GaN layer for InGaN/GaN light-emitting diodes”, Light, Energy and the Environment Congress of OSA, Suzhou, P. R. China, 2015.

13. Z. –H. Zhang, W. G. Bi, Y. H. Zhang, X. W. Sun and H. V. Demir, “New paths for increasing the carrier injection efficiency for InGaN/GaN light-emitting diodes”, 12th China International Forum on Solid State Lighting (SSLCHINA 2015), Shenzhen, P. R. China, 2015, invited talk.

14. Z. –H. Zhang, W. G. Bi, Y. H. Zhang, X. W. Sun and H. V. Demir, “New paths for increasing the carrier injection efficiency for InGaN/GaN light-emitting diodes”, Shanghai University, Shanghai, P. R. China, 2015, invited talk.

15. Z. –H. Zhang, W. G. Bi, Y. H. Zhang, X. W. Sun and H. V. Demir, “New paths for increasing the carrier injection efficiency for InGaN/GaN light-emitting diodes”, Peking University, Beijing, P. R. China, 2015, invited talk.

16. Z. –H. Zhang, W. G. Bi, Y. H. Zhang, X. W. Sun and H. V. Demir, “Manipulating the quantum transport for holes to increase the injection efficiency for InGaN/GaN light-emitting diodes, The 2016 EMN Quantum Meeting, Phuket, Thailand, 2016, invited talk.

Founded Research Projects

1. Startup grant from Hebei University of Technology, “Development of high power III-V nitride light emitting diodes”, 185,0000 RMB.

2. Natural Science Foundation of China (51502074), “The effect of the polarization induced electric field on the carrier injection and the internal quantum efficiency for III-V nitride light emitting diodes”, 24,0000 RMB.

Memberships and Volunteer Work

IEEE Membership.

IEEE Photonics Society Membership.

Reviewer for Applied Physics Letters, Optics Letters, Optics Express, IEEE/OSA Journal of Display Technology, Journal of Semiconductors.

Technical Citations for My Research Work:

1.       “Tailored last quantum barrier achieves more efficient, powerful GaN LEDs” was highlighted by Semiconductor Today on 13 May 2014, (Semiconductor-Today in Britain).

Link: http://www.semiconductor-today.com/news_items/2014/MAY/NTU_130514.shtml

2.       “Hot holes for improved injection into nitride LEDs” was highlighted by Semiconductor Today on 5 November 2014, (Semiconductor-Today in Britain).

Link: http://www.semiconductor-today.com/news_items/2014/NOV/NT_051114.shtml

3.       “Grading barriers for improved hole distribution in nitride LEDs” was highlighted by Semiconductor Today on 3 August 2013, (Semiconductor-Today in Britain).

Link:http://www.semiconductortoday.com/news_items/2013/AUG/IMPROVEDHOLELEDS_060813.html

 

 

 

4.       “Grading InGaN wells to increase LED light output power and efficiency” was highlighted by Semiconductor Today on 15 August 2014, (Semiconductor-Today in Britain).

Link: http://www.semiconductor-today.com/news_items/2014/AUG/NTU_150814.shtml

5.       p-doping-free InGaN/GaN light emitting diodes driven by three-dimensional hole gas” highlighted by Editor of Appl. Phys. Lett. (USA).

 

6.       “A hole modulator for InGaN/GaN light-emitting diodes” was highlighted by Semiconductor Today on 11 March 2015, (Semiconductor-Today in Britain).

Link: http://www.semiconductor-today.com/news_items/2015/mar/ntu_110315.shtml

Honors and Awards Received

Shandong University Scholarship for outstanding students in 2003.

Shandong University Scholarship for outstanding students in 2004.

Jiangjun Scholarship for outstanding students in 2004.

Shandong University Scholarship for outstanding students in 2005.

Excellent graduates (top 5% in School of Physics) of Shandong University in 2006.

Excellent graduates of Shandong Province in 2006.

Chinese Government Award for Outstanding Self-Financed Students Abroad in 2014.