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Bi Wengang

Translator: International Office Editor: release date :2015-12-08

School of Electronics and Information Engineering,
Key Laboratory of Electronic Materials and Devices of Tianjin,
Email: wbi@hebut.edu.cn, Tel: +862260435772

Research Areas

·           Low-dimensional photonic and electronic materials (Perovskite, Graphene, colloidal quantum dots, new polymer composite, soft magnets): new structures, novel synthesis methods, display and solid-state lighting applications.

·           Micro/nano-fabrications and nano devices: nanomaterial printing technology, nanoimprint technology, and spherical-lens photolithography.

·           Wide-band-gap semiconductor optoelectronic materials and devices (quantum-dot LEDs, Solar Cells, LDs) as well as electronic devices (HEMT, MOSFET, IGBT, thyristor etc.): MOCVD growth, device design, modeling, fabrication, and characterization.

·           Piezoelectronics.

·           Integration of opto and electronic devices


Positions Available


We have immediate openings for postdoctoral researchers and are actively looking for enthusiastic students who plan to pursue advanced studies at Ph.D or Master degree level in the above-mentioned research areas. Candidates with Materials Science, Physics, Electrical Engineering and Chemistry etc. background are welcome to apply! Please send resume to wbi@hebut.edu.cn.


Professor Wengang Bi

 More than 25 years of persistent research and development on cutting-edge nanomaterials, photonic materials and device structures with their applications to optoelectronic devices, lighting and displays; Principle Investigator and successfully led a number of large-scale R&D programs that resulted in commercial new products. One of the key technical leaders and top managements who successfully commercialized quantum-dots technology for lighting and displays and led Najing Technology Co., Ltd went public (IPO)

·           25+ years invaluable research, product development and commercialization experience on nanomaterials, photonic materials, device physics, device design, and characterization (Colloidal-quantum dots-based displays; Lasers – Nanoscale Microdisk, DFB, FP, VCSELs, LEDs, EA modulators; APDs, and detectors) at world-class laboratories and industries (Hewlett-Packard Laboratory, Agilent Technologies Laboratory, Philips Lumileds) combined with successful track record of leadership in R&D and technology development that led to the initial public offering (IPO) of start ups.

·           Pioneered a number of research and technology developments with successful commercialization:

o    Developed quantum dots (QD) based display technology with dramatically improved color gamut (from 70% to 120% NTSC standard) and commercialized QD TV in partner with TV manufacturers;

o    Groundbreaking novel technology incorporating state-of-the-art quantum dots for solid-state lighting applications with much improved efficacy at high CRI (>15% efficacy improvement at >90 CRI which leads to a 15% additional energy savings for achieving the same light output);

o    Nanoscale Microdisk Lasers with Dilute III-V Nitride Semiconductors having superior high-temperature performance: First to use InNAsP/InGaAsP high carrier confinement in double heterostructures for microdisk lasers (T0 improved from 60K to 97K);

o    High-speed integrated EA modulator/DFB laser arrays with selective-area growth technology delivering multiple times faster speed than single-channel laser

o    Mid-infrared laser and detector with the then novel III-V Sb-containing compounds and superlattices;

o    Pioneer in long wavelength, 1300-1550 nm, vertical-cavity surface-emitting lasers (VCSELs) research and developments.

o    Novel semiconductor material epitaxy growth technique – gas source molecular beam epitaxy



 Ph.D.   (Applied Physics): Sept. 1992 - Feb. 1997    Dept. of Electrical and Computer Engineering, University of California, San Diego

M.E.     (Semiconductor Materials): Sep. 1988 - Sept. 1991            

              Shanghai Institute of Metallurgy, the Chinese Academy of Sciences, China

B.S.     (Semiconductor Physics and Devices): Sep. 1984 - July 1988            

              Dept. of Electronic Science, Jilin University, China


AWARDS and Professional Activities

·           Distinguished Chair Professor, Hebei University of Technology, china (2014)

·           Awardee of China National “1000 Talents Plan” (2011)

·           Awardee of China Zhejiang Province “1000 Talents Plan” (2010)

·            “Chinese Academy of Sciences Natural Science Award” (1998)

·           Research Scholarship from NSF, UC San Diego, CA (1992~1996)

·           The President Fellowship Award of Chinese Academy of Sciences (1991)

·           Excellent Dissertation Award, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, China (1991)

·           IEEE senior member; OSA, APS, SPIE, and MRS member

·           IEEE Electron Devices Society member, IEEE Communications Society member

·           Member of OLN (Optics Legislative Network) and OSA Member Advisory Network

·           Reviewer of Optics Letters, Optics Express, Applied Optics, Optical Materials Express, Journal of the Optical Society of America A, Applied Physics A

·           China “1000 Talents Plan” magazine editor

·           Committee member of the China National “1000 Young Talents Plan” review panel

·           Committee member of China Jiangsu Province “Shuangchuang Talents Plan” review panel

·           Committee member of China Jinhua City “Shuanglong Talents Plan” review panel

·           China Zhejiang province global foreign expert

·           Member of Board of Directors – NNCrystal US Corporation, Najing Technology Corporation Limited, Hangzhou Nanocrystal Lighting Technology Co., Ltd

·           Interviewed and reported by <Scientific Chinese >magazine, people’s daily overseas edition newspaper, Zhejiang TV

·           Authored or co-authored 61 refereed publications and presented 20 conference talks

·           Inventor of 20 patents
    Lead editor of a new book, Handbook of GaN Semiconductor Materials and Devices, to be published by Taylor and Francis Group

Nano Optoelectronics Group,Key Laboratory of Electronic Materials and Devices of Tianjin